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1. product pro?le 1.1 general description passivated high commutation triac in a plastic envelope, suitable for surface mounting, intended for use in circuits where high static and dynamic dv/dt and high di/dt can occur. these devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. 1.2 features 1.3 quick reference data 2. pinning information [1] connected to main terminal 2 (t2). bta208s-600b; BTA208S-800B three-quadrant triacs high commutation rev. 02 31 may 2005 product data sheet n high maximum junction temperature n surface mounting package n high commutation capability n low thermal resistance n v drm 600 v (bta208s-600b) n i t(rms) 8 a n v drm 800 v (BTA208S-800B) n i tsm 65 a table 1: pinning pin description simpli?ed outline symbol 1 main terminal 1 (t1) sot428 (dpak) 2 main terminal 2 (t2) 3 gate (g) mb mounting base [1] 3 2 mb 1 sym051 t1 g t2
9397 750 14861 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 31 may 2005 2 of 13 philips semiconductors bta208s-600b; BTA208S-800B three-quadrant triacs high commutation 3. ordering information 4. limiting values [1] although not recommended, off-state voltages up to 800 v may be applied without damage, but the triac may switch to the on-state. the rate of rise of current should not exceed 6 a/ m s. table 2: ordering information type number package name description version bta208s-600b to-252 plastic single-ended surface mounted package (dpak); 3 leads (one lead cropped) sot428 BTA208S-800B table 3: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v drm repetitive peak off-state voltage bta208s-600b [1] - 600 v BTA208S-800B - 800 v i t(rms) rms on-state current full sine wave; t mb 102 c; see figure 4 and 5 -8a i tsm non-repetitive peak on-state current full sine wave; t j = 25 c prior to surge; see figure 2 and 3 t=20ms - 65 a t = 16.7 ms - 71 a i 2 ti 2 t for fusing t = 10 ms - 21 a 2 s di t /dt rate of rise of on-state current i tm = 12 a; i g = 0.2 a; di g /dt = 0.2 a/ m s - 100 a/ m s i gm peak gate current -2a v gm peak gate voltage -5v p gm peak gate power -5w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature - 40 +150 c t j junction temperature - 125 c
9397 750 14861 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 31 may 2005 3 of 13 philips semiconductors bta208s-600b; BTA208S-800B three-quadrant triacs high commutation a = conduction angle fig 1. on-state power dissipation as a function of rms on-state current; maximum values f = 50 hz fig 2. non-repetitive peak on-state current as a function of number of half cycles; sinusoidal currents; maximum values 001aac659 4 8 12 p tot (w) 0 i t(rms) (a) 0 10 8 46 2 120 60 a = 180 a a t mb(max) (?c) 101 105 109 113 117 121 125 90 30 001aac667 70 i tsm (a) 0 number of half cycles 1 10 3 10 2 10 10 20 30 40 50 t p t j(init) = 25 c max i t i tsm t
9397 750 14861 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 31 may 2005 4 of 13 philips semiconductors bta208s-600b; BTA208S-800B three-quadrant triacs high commutation t p 20 ms fig 3. non-repetitive peak on-state current as a function of pulse width; sinusoidal currents; maximum values f = 50 hz; t mb 102 c fig 4. rms on-state current as a function of surge duration; sinusoidal currents; maximum values fig 5. rms on-state current as a function of mounting base temperature; maximum values 001aac663 t p (ms) 10 - 2 10 2 10 10 - 1 1 10 2 10 3 i tsm (a) 10 dl t /dt limit i tsm t i t t j(init) = 25 c max t surge duration (s) 10 - 2 10 1 10 - 1 001aac665 10 15 5 20 25 i t(rms) (a) 0 t mb ( c) - 50 150 100 050 001aac661 4 6 2 8 10 i t(rms) (a) 0 102 c
9397 750 14861 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 31 may 2005 5 of 13 philips semiconductors bta208s-600b; BTA208S-800B three-quadrant triacs high commutation 5. thermal characteristics table 4: thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base full cycle; see figure 6 - - 2.0 k/w half cycle; see figure 6 - - 2.4 k/w r th(j-a) thermal resistance from junction to ambient printed-circuit board (fr4) mounted; footprint as in figure 14 - 75 - k/w fig 6. transient thermal impedance from junction to mounting base as a function of pulse width 001aac673 t p (s) 10 - 5 110 10 - 1 10 - 2 10 - 4 10 - 3 1 10 - 1 10 z th(j - mb) (k/w) 10 - 2 unidirectional bidirectional t p p d t
9397 750 14861 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 31 may 2005 6 of 13 philips semiconductors bta208s-600b; BTA208S-800B three-quadrant triacs high commutation 6. static characteristics [1] device does not trigger in the t2 - g+ quadrant. table 5: static characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit i gt gate trigger current v d = 12 v; i t = 0.1 a; see figure 8 [1] t2+ g+ 2 18 50 ma t2+ g - 2 2150ma t2 - g - 2 3450ma i l latching current v d = 12 v; i gt = 0.1 a; see figure 10 t2+ g+ - 31 60 ma t2+ g - - 3490ma t2 - g - - 3060ma i h holding current v d = 12 v; i gt = 0.1 a; see figure 11 - 3160ma v t on-state voltage i t = 10 a; see figure 9 - 1.3 1.65 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a; see figure 7 - 0.7 1.5 v v d = 400 v; i t = 0.1 a; t j = 125 c 0.25 0.4 - v i d off-state current v d =v drm(max) ; t j = 125 c - 0.1 0.5 ma
9397 750 14861 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 31 may 2005 7 of 13 philips semiconductors bta208s-600b; BTA208S-800B three-quadrant triacs high commutation 7. dynamic characteristics table 6: dynamic characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit dv d /dt rate of rise of off-state voltage v dm = 0.67v drm(max) ; t j = 125 c; exponential waveform; gate open circuit 1000 4000 - v/ m s di com /dt rate of rise of commutating current v dm = 400 v; t j = 125 c; i t(rms) =8a; without snubber; gate open circuit; see figure 12 - 14 - a/ms t gt gate-controlled turn-on time i tm = 12 a; v d =v drm(max) ; i g = 0.1 a; di g /dt = 5 a/ m s -2- m s (1) t2 - g - (2) t2+ g - (3) t2+ g+ fig 7. normalized gate trigger voltage as a function of junction temperature fig 8. normalized gate trigger current as a function of junction temperature t j ( c) - 50 150 100 50 0 001aac334 0.8 1.2 1.6 v gt (t j ) 0.4 v gt (25 c) t j ( c) - 50 150 100 050 001aac669 1 2 3 0 (1) (2) (3) i gt (t j ) i gt (25 c)
9397 750 14861 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 31 may 2005 8 of 13 philips semiconductors bta208s-600b; BTA208S-800B three-quadrant triacs high commutation 8. package information plastic meets ul94 v-0 at 1 8 inch. v o = 1.264 v; r s = 37.8 m w (1) t j = 125 c; typical values (2) t j = 25 c; maximum values (3) t j = 125 c; maximum values fig 9. on-state characteristic fig 10. normalized latching current as a function of junction temperature fig 11. normalized holding current as a function of junction temperature fig 12. rate of rise of commutating current as a function of junction temperature; typical values 001aac670 v t (v) 03 2 1 10 15 5 20 25 i t (a) 0 (1) (3) (2) t j ( c) - 50 150 100 50 0 001aac336 1 2 3 i l (t j ) 0 i l (25 c) t j ( c) - 50 150 100 50 0 001aac337 1 2 3 i h (t j ) 0 i h (25 c) 001aac675 t j ( c) 20 140 100 60 10 2 10 10 3 dl com /dt (a/ms) 1
9397 750 14861 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 31 may 2005 9 of 13 philips semiconductors bta208s-600b; BTA208S-800B three-quadrant triacs high commutation 9. package outline fig 13. package outline sot428 (to-252) references outline version european projection issue date iec jedec jeita sot428 sc-63 to-252 sot428 05-02-09 05-02-11 dimensions (mm are the original dimensions) plastic single-ended surface mounted package (dpak); 3 leads (one lead cropped) a 2 13 e 1 d 2 d 1 h d l l 1 l 2 e 1 e mounting base wa m b e b 2 b 1 c a 1 y 0 5 10 mm scale unit mm 0.93 0.73 5.46 5.00 0.56 0.20 6.22 5.98 6.73 6.47 10.4 9.6 2.95 2.55 a 1 2.38 2.22 ab 2 1.1 0.9 b 1 e 1 0.89 0.71 bcd 1 0.9 0.5 l 2 ee 2.285 4.57 4.0 d 2 min 4.45 e 1 min 0.5 l 1 min h d lw 0.2 y max 0.2 a
9397 750 14861 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 31 may 2005 10 of 13 philips semiconductors bta208s-600b; BTA208S-800B three-quadrant triacs high commutation 10. mounting dimensions in mm fig 14. sot428: minimum pad sizes for surface mounting sot428 6.15 5.80 5.90 1.80 7.00 1.30 1.50 1.40 1.65 4.57 6.00 6.125 4.725 6.50 0.30 1.00 1.15 5.65 2.30 2.40 2.45 3.60 6.00 5.75 4.60 solder lands solder resist occupied area solder paste
9397 750 14861 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 31 may 2005 11 of 13 philips semiconductors bta208s-600b; BTA208S-800B three-quadrant triacs high commutation 11. revision history table 7: revision history document id release date data sheet status change notice doc. number supersedes bta208s_ser_b_2 20050531 product data sheet - 9397 750 14861 bta208s_series_b_1 modi?cations: ? the format of this data sheet has been redesigned to comply with the new presentation and information standard of philips semiconductors. ? 500 v types removed. ? alternative pinning types removed. bta208s_series_b_1 19970901 product speci?cation - - -
philips semiconductors bta208s-600b; BTA208S-800B three-quadrant triacs high commutation 9397 750 14861 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 02 31 may 2005 12 of 13 12. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 14. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 15. trademarks notice all referenced brands, product names, service names and trademarks are the property of their respective owners. 16. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 31 may 2005 document number: 9397 750 14861 published in the netherlands philips semiconductors bta208s-600b; BTA208S-800B three-quadrant triacs high commutation 17. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 thermal characteristics. . . . . . . . . . . . . . . . . . . 5 6 static characteristics. . . . . . . . . . . . . . . . . . . . . 6 7 dynamic characteristics . . . . . . . . . . . . . . . . . . 7 8 package information . . . . . . . . . . . . . . . . . . . . . 8 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 11 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 12 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 13 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 14 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 15 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 16 contact information . . . . . . . . . . . . . . . . . . . . 12

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